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Anomalous damage in N⁺ implanted InAsAYDINLI, A; DRIGO, A. V.Radiation effects and defects in solids. 1990, Vol 113, Num 4, pp 269-275, issn 1042-0150, 7 p.Article

Cesium-137 urinary excretion by Northeastern (Pordenone) Italian people following the Chernobyl nuclear accidentCAPRA, E; DRIGO, A; MENIN, A et al.Health physics (1958). 1989, Vol 57, Num 1, pp 99-106, issn 0017-9078, 8 p.Article

Radon-222 measurements in drinking waterCAPRA, E; DRIGO, A; MENIN, A et al.Radiation protection dosimetry. 1991, Vol 35, Num 4, pp 269-270, issn 0144-8420Article

Structural characterization of CdS epilayers by channeling Rutherford backscattering spectrometryLEO, G; DRIGO, A. V; LOVERGINE, N et al.Journal of applied physics. 1991, Vol 70, Num 4, pp 2041-2045, issn 0021-8979Article

Elastic distortion field in single layer heterostructures in the presence of misfit dislocationsMAZZER, M; CARNERA, A; DRIGO, A. V et al.Journal of applied physics. 1990, Vol 68, Num 2, pp 531-539, issn 0021-8979Article

Structural characterization and surface lattice strain determination of ZnS/GaAs heterostructures grown by metalorganic vapour phase epitaxyLEO, G; LAZZARINI, L; LOVERGINE, N et al.Journal of crystal growth. 1997, Vol 173, Num 3-4, pp 277-284, issn 0022-0248Article

Ingested soil as a source of ¹³⁷Cs to ruminantsBELLI, M; BLASI, M; CAPRA, E et al.Science of the total environment. 1993, Vol 136, Num 3, pp 243-249, issn 0048-9697Article

¹³⁷Cs transfer coefficients from fodder to cow milkBELLI, M; SANSONE, U; PIASENTIER, E et al.Journal of environmental radioactivity. 1993, Vol 21, Num 1, pp 1-8, issn 0265-931XArticle

Anomalous distribution of As during implantation in silicon under self-annealing conditionsLULLI, G; MERLI, P. G; RIZOLI, R et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 2940-2946, issn 0021-8979, 7 p.Article

Preparation and characterization of In₂Se₃ crystalsDE BLASI, C; DRIGO, A. V; MICOCCI, G et al.Journal of crystal growth. 1989, Vol 94, Num 2, pp 455-458, issn 0022-0248Article

On the dynamic annealing mechanism in P⁺-implanted siliconBERTI, M; DRIGO, A. V; LULLI, G et al.Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp 95-106, issn 0031-8965Conference Paper

Mechanisms of strain relaxation in III-V semiconductor heterostructuresMAZZER, M; ROMANATO, F; DRIGO, A. V et al.Journal of crystal growth. 1993, Vol 126, Num 1, pp 125-132, issn 0022-0248Conference Paper

Synthesis of chromium silicide with laser pulsesD'ANNA, E; DRIGO, A. V; LEGGIERI, G et al.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 4, pp 411-415, issn 0721-7250Article

Transfer of Chernobyl fall-out caesium radioisotopes in the cow food chainBELLI, M; DRIGO, A; MENEGON, S et al.Science of the total environment. 1989, Vol 85, pp 169-177, issn 0048-9697, 9 p.Article

Silicon loss during TiSi₂ formationCOHEN, C; NIPOTI, R; SIEJKA, J et al.Journal of applied physics. 1987, Vol 61, Num 11, pp 5187-5189, issn 0021-8979Article

Dose rate effects on the dynamic annealing mechanism in P⁺-implanted siliconBERTI, M; DRIGO, A. V; LULLI, G et al.Physica status solidi. A. Applied research. 1986, Vol 97, Num 1, pp 77-85, issn 0031-8965Article

Recent developments of the RBS technique for the analysis of semiconductor nanostructuresBERTI, M; DRIGO, A. V; TORZO, G et al.Microscopy microanalysis microstructures (Les Ulis). 1995, Vol 6, Num 5-6, pp 505-511, issn 1154-2799Conference Paper

Composition and structure of Si-Ge layers produced by ion implantation and laser meltingBERTI, M; MAZZI, G; CALCAGNILE, L et al.Journal of materials research. 1991, Vol 6, Num 10, pp 2120-2126, issn 0884-2914Article

Explosive crystallization of dilute amorphous Si-Ge alloysAYDINLI, A; BERTI, M; DRIGO, A. V et al.Journal of applied physics. 1988, Vol 64, Num 6, pp 3301-3303, issn 0021-8979Article

Transformation to amorphous state of metals by ion implantation: P in Ni = Transformation à l'état amorphe de métaux par implantation ionique: P dans NiCOHEN, C; BENYAGOUB, A; BERNAS, H et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 1, pp 5-14, issn 0163-1829Article

Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopyLOVERGINE, N; CINGOLANI, R; LEO, G et al.Applied physics letters. 1993, Vol 63, Num 25, pp 3452-3454, issn 0003-6951Article

Specific behaviour of CdTe ion implantation damageLEO, G; DRIGO, A. V; TRAVERSE, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 16, Num 1-3, pp 123-127, issn 0921-5107Conference Paper

Nitridation of titanium by multipulse excimer laser irradiationD'ANNA, E; LEGGIERI, G; LUCHES, A et al.Applied surface science. 1990, Vol 46, Num 1-4, pp 365-370, issn 0169-4332, 6 p.Conference Paper

MOVPE growth of wide band-gap II-VI compounds for near-UV and deep-blue light emitting devicesLOVERGINE, N; PRETE, P; LEO, G et al.Crystal research and technology (1979). 1998, Vol 33, Num 2, pp 183-195, issn 0232-1300Article